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Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization

ORCID
0000-0003-2543-7682
Affiliation
Institute of Semiconductor Technology
Bezshlyakh, Daria D.;
ORCID
0000-0003-2867-3197
Affiliation
Institute of Semiconductor Technology
Spende, Hendrik; Weimann, Thomas; Hinze, Peter;
Affiliation
Institute of Semiconductor Technology
Bornemann, Steffen;
ORCID
0000-0002-9205-342X
Affiliation
Institute of Semiconductor Technology
Gülink, Jan; Canals, Joan; Prades, Joan Daniel; Dieguez, Angel;
ORCID
0000-0002-2724-1686
Affiliation
Institute of Semiconductor Technology
Waag, Andreas

The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs.

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