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Transferable micromachined piezoresistive force sensor with integrated double-meander-spring system

GND
1175140783
Affiliation
Institute of Semiconductor Technology (IHT) ; Laboratory for Emerging Nanometrology (LENA)
Hamdana, Gerry;
GND
1175139769
Affiliation
Institute of Semiconductor Technology (IHT) ; Laboratory for Emerging Nanometrology (LENA)
Bertke, Maik; Doering, Lutz; Frank, Thomas; Brand, Uwe;
GND
1175143138
Affiliation
Institute of Semiconductor Technology (IHT) ; Laboratory for Emerging Nanometrology (LENA)
Wasisto, Hutomo Suryo;
ORCID
0000-0001-5801-813X
Affiliation
Institute of Semiconductor Technology (IHT) ; Laboratory for Emerging Nanometrology (LENA)
Peiner, Erwin

A developed transferable micro force sensor was evaluated by comparing its response with an industrially manufactured device. In order to pre-identify sensor properties, three-dimensional (3-D) sensor models were simulated with a vertically applied force up to 1000 µN. Then, controllable batch fabrication was performed by alternately utilizing inductively coupled plasma (ICP) reactive ion etching (RIE) and photolithography. The assessments of sensor performance were based on sensor linearity, stiffness and sensitivity. Analysis of the device properties revealed that combination of a modest stiffness value (i.e., (8.19 ± 0.07) N m−1) and high sensitivity (i.e., (15.34 ± 0.14) V N−1) at different probing position can be realized using a meander-spring configuration. Furthermore, lower noise voltage is obtained using a double-layer silicon on insulator (DL-SOI) as basic material to ensure high reliability and an excellent performance of the sensor.

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